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 HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6833 Issued Date : 1994.05.27 Revised Date : 2002.10.24 Page No. : 1/3
HBAS16
HIGH-SPEED SWITCHING DIODE
Description
* The HBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits. * The devices is manufactured by the silicon epitaxial planar process and packed in a plastic surface mount package.
SOT-23
Features
* Small SMD Package (SOT-23) * Low Forward Voltage * Fast Reverse Recovery Time * Small Total Capacitance
Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature .............................................................................................. -65~+150 C Junction Temperature .................................................................................................... +150 C * Maximum Power Dissipation Total Power Dissipation (Ta=25C) ................................................................................ 200 mW * Maximum Voltages and Currents (Ta=25C) Reverse Voltage .................................................................................................................. 75 V Repetitive Reverse Voltage ................................................................................................. 85 V Forward Current ............................................................................................................. 250 mA Repetitive Forward Current ........................................................................................... 500 mA Forward Surge Current (1ms)................................................................................................ 1 A
Characteristics (Ta=25C)
Characteristic Reverse Breakdown Voltage Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time Symbol V(BR) VF(1) VF(2) VF(3) VF(4) IR CT Trr Condition IR=100uA IF=1mA IF=10mA IF=50mA IF=150mA VR=75V VR=0, f=1MHZ IF=IR=10mA, RL=100, measured at IR=1mA Min 75 Max. 715 855 1000 1250 1 2 6 Unit V MV mV mV mV uA pF nS
HBAS16
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Forward Biased Voltage & Forward Current
450
Spec. No. : HE6833 Issued Date : 1994.05.27 Revised Date : 2002.10.24 Page No. : 2/3
Capacitance & Reverse-Biased Voltage
1
Current-IF (mA)
300
150
0 0 500 1000 1500 2000
Capacitance-Cd (pF)
0.1 0.1 1 10 100
Forward Biased Voltage-VF (mV)
Reverse Biased Voltage-VR (V)
HBAS16
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
SOT-23 Dimension
Diagram:
L
Spec. No. : HE6833 Issued Date : 1994.05.27 Revised Date : 2002.10.24 Page No. : 3/3
A
Marking:
3 BS 1 V G 2
A6
Rank Code Control Code
3-Lead SOT-23 Plastic Surface Mounted Package HSMC Package Code: N
C
D
H
K
J
Style: Pin 1.Anode 2.NC 3.Cathode *: Typical
DIM A B C D G H
Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040
Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10
DIM J K L S V
Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256
Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
* Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HBAS16
HSMC Product Specification


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